PART |
Description |
Maker |
BDX88C BDX87C -BDX87C |
Complemetary Silicon Power Darlington Transistors(???杈炬?椤挎?浣??) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管)
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STMICROELECTRONICS[STMicroelectronics] 意法半导
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TIP142 TIP147 TIP146 TIP145 TIP141 TIP140 4132 |
Complemetary Silicon Power Darlington Transistors(浜?ˉ纭????揪??】?朵?绠? From old datasheet system COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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STMicro
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NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. Silicon Power Rectifier Diode, 25 Amp Silicon Power Rectifier Diode 25 Amp Silicon Power Rectifier Diode / 25 Amp
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NTE[NTE Electronics]
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MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system
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Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp] http://
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1N3161 1N3161R 1N3162 1N3162R 1N3163 1N3163R 1N316 |
Standard Rectifier (trr more than 500ns) SILICON POWER RECTIFIER 240 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 300 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 240 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 240 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
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MICROSEMI[Microsemi Corporation] Microsemi, Corp.
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NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
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NTE Electronics, Inc. NTE[NTE Electronics]
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MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
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NEC[NEC]
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2SD2163 |
Silicon power transistor NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
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NEC
|
ASIS50-28 |
NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator HF BAND, Si, NPN, RF POWER TRANSISTOR
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ASI[Advanced Semiconductor] Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
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2SK947 2SK947-MR |
N-CHANNLEL SILICON POWER MOSFET 12 A, 250 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-CHANNLEL SILICON POWER MOSFET - CHANNLEL硅功率MOSFET
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FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
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